| PART |
Description |
Maker |
| UPD44324082F5-E33-EQ2 UPD44324362F5-E33-EQ2 UPD443 |
36M-BIT DDRII SRAM 2-WORD BURST OPERATION 36M条位SRAM2条DDRII字爆发运
|
NEC Corp.
NEC, Corp.
|
| UPD44324184F5-E33-EQ2 UPD44324084F5-E33-EQ2 UPD443 |
36M-BIT DDRII SRAM 4-WORD BURST OPERAT 36M条位SRAM条DDRII词爆生产营运
|
NEC Corp.
NEC, Corp.
|
| UPD44325362F5-E50-EQ2 UPD44325082 UPD44325082F5-E4 |
36M-BIT QDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
| UPD44164362F5-E60-EQ1 UPD44164082 UPD44164082F5-E4 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
| R1QEA7236ABG R1QBA7236ABG R1QBA7218ABG R1QBA7236AB |
72-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| R1Q4A3636BBG-60R R1Q4A3618BBG-60R |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
http://
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MS52C1162A |
65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM 1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字6位或128k字位静态RAM 1M字6位或2M字OTPROM)
|
OKI SEMICONDUCTOR CO., LTD.
|
| MR27V852D |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI
|
| UPD4416008 UPD4416008G5-A15-9JF UPD4416008G5-A17-9 |
2M X 8 STANDARD SRAM, 17 ns, PDSO54 0.400 INCH, PLASTIC, TSOP2-54
16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT
|
NEC
|
